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CM1412 데이터 시트보기 (PDF) - ON Semiconductor

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CM1412 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
CM1412
ELECTRICAL OPERATING CHARACTERISTICS (NOTE 1)
SYMBOL PARAMETER
R
Resistance
CONDITIONS
R
MATCH
C
Resistance Matching
Capacitance
ILEAK
Diode Leakage Current
VSIG
Signal Voltage
Positive Clamp
Negative Clamp
VIN=5.0V
ILOAD = 10mA
VESD In-system ESD Withstand Voltage
Notes 2 and 4
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
VCL
Clamping Voltage during ESD Discharge Notes 2,3 and 4
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
fC
Cut-off frequency
ZSOURCE = 50Ω, ZLOAD = 50Ω
R = 68Ω, C = 47pF
MIN TYP
61 68
38 47
MAX
75
5
56
1.0
5
7
15
-15 -10
-5
±15
±8
+15
-19
60
UNITS
Ω
%
pF
μA
V
V
kV
kV
V
V
MHz
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open.
Rev. 3 | Page 4 of 9 | www.onsemi.com

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