130N30 데이터 시트보기 (PDF) - IXYS CORPORATION
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130N30 Datasheet PDF : 4 Pages
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12
10
VVdDSs==310500VV
ID==306A5A
IG==1100mmAA
8
6
4
2
0
0
100 200 300 400 500
Gate Charge - nC
Figure 7. Gate Charge
200
160
120
80
TJ = 125OC
TJ = 25OC
40
0
0.3
0.6
0.9
1.2
1.5
1.8
VSD - Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
0.100
IXFN 130N30
18000
15000
CISS
12000
f = 100KHz
9000
6000
3000
0
0
COSS
CRSS
5 10 15 20 25 30 35 40
VDS - Volts
Figure 8. Capacitance Curves
0.010
0.001
10-4
10-3
10-2
10-1
Pulse Width - Seconds
Figure 10. Transient Thermal Resistance
Single Pulse
100
101
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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