CNY17. 데이터 시트보기 (PDF) - Vishay Semiconductors
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CNY17. Datasheet PDF : 8 Pages
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Alternative Device Available, Use CNY17
www.vishay.com
CNY17., CNY17G
Vishay Semiconductors
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
icny17_13
VCEsat = f (IC)
IF = 3 x IC
10
100
IC (mA)
Fig. 12 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
icny17_14
VCEsat = f (IC)
IF = 2 x IC
IF = 3 x IC
10
100
IC (mA)
Fig. 13 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-2
1.0
0.9
VCEsat = f (IC)
0.8
0.7
0.6
IF = IC
0.5
0.4
0.3
0.2
IF = 2 x IC
0.1
0
IF = 3 x IC
1
10
100
icny17_15
IC (mA)
Fig. 14 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-3
1.0
0.9
0.8
VCEsat = f (IC)
0.7
0.6
IF = IC
0.5
0.4
0.3
0.2
IF = 2 x IC
0.1
0
1
icny17_16
IF = 3 x IC
10
100
IC (mA)
Fig. 15 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-4
200
Ptot = f (TA)
150
Transistor
100
Diode
50
0
0
icny17_18
25
50
75
100
TA (°C)
Fig. 16 - Permissible Power Dissipation for Transistor and Diode
Rev. 1.6, 17-Feb-14
6
Document Number: 81863
For technical questions, contact: optocoupleranswers@vishay.com
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