CR02AM-8-E 데이터 시트보기 (PDF) - Renesas Electronics
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CR02AM-8-E Datasheet PDF : 8 Pages
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CR02AM-8
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
RGK = 1kΩ
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
120
100
80
60
#2
40
#1
Typical Example
20
#1
#2
IGT(25°C)=10µA
IGT(25°C)=66µA
Tj = 125°C, RGK = 1kΩ
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Holding Current vs.
Gate to Cathode Resistance
500
Typical Example
IGT(25°C) IH(1kΩ)
400
# 1 13µA 1.6mA
# 2 59µA 1.8mA
#1
300
#2
200
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Gate to Cathode Resistance
120
Typical Example
100
Tj = 125°C
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate to Cathode Resistance (kΩ)
Holding Current vs.
Junction Temperature
102
7
Tj = 25°C
5
Typical Example
3
IH(25°C) = 1mA
2
IGT(25°C) = 25µA
101
7
5
Distribution
3
Typical Example
2
100
7
5
3
2
10–1
–60–40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.1.00, Mar.28.2005, page 5 of 7
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