MMBTA42-7-F(Rev10-2) 데이터 시트보기 (PDF) - Diodes Incorporated.
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MMBTA42-7-F Datasheet PDF : 3 Pages
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SPICE MODEL: MMBTA42
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMBTA92)
• Ideal for Low Power Amplification and Switching
• Lead Free/RoHS Compliant (Note 4)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
A
C
BC
B TOP VIEW E
E
D
G
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method
208
• Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
• Marking (See Page 2): K3M
• Ordering & Date Code Information: See Page 2
• Weight: 0.008 grams (approximate)
K
M
J
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
300
300
6.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol
Min
Max Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
V(BR)CBO
300
⎯
V
V(BR)CEO
300
⎯
V
V(BR)EBO
6.0
⎯
V
ICBO
⎯
100
nA
IEBO
⎯
100
nA
IC = 100μA, IE = 0
IC = 1.0mA, IBB = 0
IE = 100μA, IC = 0
VCB = 200V, IE = 0
VCE = 6.0V, IC = 0
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
25
hFE
40
⎯
⎯
40
VCE(SAT)
⎯
0.5
V
VBE(SAT)
⎯
0.9
V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
IC = 20mA, IBB = 2.0mA
IC = 20mA, IBB = 2.0mA
Output Capacitance
Ccb
⎯
3.0
pF
VCB = 20V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
50
⎯
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power
dissipation rating (Pd) and power derating curve (figure 1).
4. No purposefully added lead.
DS30062 Rev. 10 - 2
1 of 3
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MMBTA42
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