MMBTA42-13-F 데이터 시트보기 (PDF) - Diodes Incorporated.
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MMBTA42-13-F Datasheet PDF : 3 Pages
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBTA92)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking (See Page 2): K3M
• Ordering & Date Code Information: See Page 2
• Weight: 0.008 grams (approximate)
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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A
C
BC
B TOP VIEW E
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
300
300
6.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
Min
Max Unit
V(BR)CBO
300
⎯
V
V(BR)CEO
300
⎯
V
V(BR)EBO
6.0
⎯
V
ICBO
⎯
100
nA
IEBO
⎯
100
nA
25
hFE
40
40
VCE(SAT)
⎯
VBE(SAT)
⎯
Ccb
⎯
fT
50
⎯
⎯
0.5
V
0.9
V
3.0
pF
⎯
MHz
Test Condition
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 200V, IE = 0
VCE = 6.0V, IC = 0
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA
VCB = 20V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power
dissipation rating (Pd) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30062 Rev. 11 - 2
1 of 3
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MMBTA42
© Diodes Incorporated
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