CSC1047D 데이터 시트보기 (PDF) - Continental Device India Limited
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CSC1047D Datasheet PDF : 3 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC1047
…
ECB
TO-92
Plastic Package
Suitable for RF Amplifier in FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
VCEO
VEBO
IC
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
VALUE
30
20
3
15
*400
150
- 55 to +150
UNITS
V
V
V
mA
mW
ºC
ºC
*PC=250mW / Potting type: PC=250mW
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
VCBO
IC = 10µA, IE = 0
Emitter Base Voltage
VEBO
IE = 10µA, IC = 0
DC Current Gain
*hFE
VCE = 6V, - IC = 1mA
Transition Frequency
fT
VCE = 6V, - I C= 1mA
Base Emitter On Voltage
VBE(on)
VCE = 6V, - IC = 1mA
Common Emitter Reverse-
Transfer Capacitance
Cre
VCB = 6V, - IE = 1mA, f=10.7MHz
Power Gain
PG
VCB =6V, - IE = 1mA, f=100 MHz
Noise Figure
NF
VCB =6V, - IE = 1mA, f=100 MHz
MIN TYP MAX UNITS
30
V
3
V
40
260
450
MHz
0.72
V
1
pF
20
dB
5
dB
*hFE Classifications
B : 40 - 110 C : 65 - 160 D : 100 - 260
Continental Device India Limited
Data Sheet
Page 1 of 3
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