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CXD1172 데이터 시트보기 (PDF) - Sony Semiconductor

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CXD1172
Sony
Sony Semiconductor Sony
CXD1172 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CXD1172AM/AP
Electrical Characteristics
(VDD = 5V, VRB = 1.0V, VRT = 2.0V, Ta = 25°C)
Item
Conversion speed
Symbol
Fc
Supply current
Reference pin current
Analog input band width
(–1dB)
Analog input capacitance
Reference resistance
(VRT to VRB)
Offset voltage1
Digital input voltage
Digital input current
Digital output current
IDD
IREF
BW
CIN
RREF
EOT
EOB
VIH
VIL
IIH
IIL
IOH
IOL
Output data delay
TDL
Conditions
VDD = 4.75 to 5.25V
Ta = –20 to +75°C
VIN = 1.0 to 2.0V
fIN = 1kHz ramp
Fc = 20MSPS
NTSC ramp wave input
Min. Typ. Max. Unit
0.5
20 MSPS
7
12
mA
3
4
5.7
Envelope
18
MHz
VIN = 1.5V + 0.07Vrms
4
pF
175 250 325
Potential difference to VRT
Potential difference to VRB
0 –20 –40
mV
15 35 55
VDD = 4.75 to 5.25V
Ta = –20 to +75°C
4.0
V
1.0
VIH = VDD
VDD = max.
VIL = 0V
5
µA
5
VOH = VDD + 0.5V –1.1
VDD = min.
mA
VOL = 0.4V
3.7
With TTL 1 gate and 10pF load
Ta = –20 to +75°C
VDD = 4.75 to 5.25V
18 30 ns
Integral non-linearity error EL
Differential non-linearity
error
ED
Differential gain error
DG
Differential phase error
DP
Aperture jitter
Taj
Sampling delay
Tsd
End point
NTSC 40 IRE mod ramp
Fc = 14.3MSPS
±0.3 ±0.5
LSB
±0.3 ±0.5
1.0
%
1.0
deg
40
ps
4
ns
1 The offset voltage EOB is a potential difference between VRB and a point of position where the voltage
drops equivalent to 1/2 LSB of the voltage when the output data changes from "00000000" to "00000001".
EOT is a potential difference between VRT and a potential of point where the voltage rises equivalent to
1/2 LSB of the voltage when the output data changes from "11111111" to "11111110".
–4–

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