CXK5T8257BTM 데이터 시트보기 (PDF) - Sony Semiconductor

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CXK5T8257BTM

32768-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

Data Retention Waveform

• Low supply voltage data retention waveform

VCC

2.7V

2.2V

VDR

CE

GND

tCDRS

Data retention mode

CE ≥ VCC – 0.2V

CXK5T8257BTM/BYM/BM

tR

Data Retention Characteristics

Item

Symbol

Test conditions

Data retention voltage VDR CE ≥ VCC – 0.2V

ICCDR1

VCC = 3.0V

CE ≥ 2.8V

Data retention current

–25 to +85°C

–25 to +70°C

+25°C

ICCDR2

VCC = 2.0 to 3.6V

CE ≥ VCC – 0.2V

Data retention

setup time

Recovery time

tCDRS

tR

Chip disable to data

retention mode

∗1 VCC = 3.3V, Ta = 25°C

(Ta = –25 to +85°C)

Min. Typ. Max. Unit

2

—

3.6 V

—

—

6

—

—

3

—

0.1

— µA

— 0.12∗1 7.0

0

—

— ns

5

—

— ms

–8–

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