CXK5V8257BM 데이터 시트보기 (PDF) - Sony Semiconductor

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CXK5V8257BM

32768-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

Data retention waveform

• Low supply voltage data retention waveform

tCDRS

Data retention mode

tR

VCC

3.0V

2.0V

VDR

CE

GND

CE ≥ VCC – 0.2V

CXK5V8257BTM/BYM/BM

Data Retention Characteristics

Item

Symbol

Test condiitions

Data retention voltage VDR CE ≥ VCC – 0.2V

Data retention

current

ICCDR1

VCC = 3.0V,

CE ≥ 2.8V

0 to +70°C

0 to +40°C

+25°C

ICCDR2

VCC = 2.0 to 3.6V,

CE ≥ VCC – 0.2V

Data retention setup

time

tCDRS

Chip disable to data retention mode

Recovery time

tR

∗1 VCC = 3.3V, Ta = 25°C

(Ta = 0 to +70°C)

Min. Typ. Max. Unit

2.0 — 3.6 V

——

3

— — 0.6 µA

— 0.1 0.3

— 0.12∗1 3.5 µA

0

— — ns

5

— — ms

–7–

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