CY14B101L-SZ25XI 데이터 시트보기 (PDF) - Cypress Semiconductor
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CY14B101L-SZ25XI Datasheet PDF : 18 Pages
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CY14B101L
Data Retention and Endurance
Parameter
DATAR
NVC
Description
Data Retention at 55°C
Nonvolatile STORE Operations
Min
Unit
20
Years
200
K
Capacitance
In the following table, the capacitance parameters are listed.[6]
Parameter
Description
Test Conditions
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 0 to 3.0V
Thermal Resistance
In the following table, the thermal resistance parameters are listed.[6]
Parameter
ΘJA
ΘJC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
Max
7
7
32-SOIC
33.64
13.6
Unit
pF
pF
48-SSOP Unit
32.9
°C/W
16.35
°C/W
Figure 4. AC Test Loads
3.0V
R1 577Ω
3.0V
R1 577Ω For Tri-state Specs
Output
30 pF
R2
789Ω
Output
5 pF
R2
789Ω
AC Test Conditions
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% to 90%) ...................... <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
6. These parameters are guaranteed by design and are not tested.
Document Number: 001-06400 Rev. *J
Page 8 of 18
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