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CY14B256P 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY14B256P Datasheet PDF : 36 Pages
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CY14B256P
256-Kbit (32 K × 8) Serial (SPI) nvSRAM
with Real Time Clock
256-Kbit (32 K × 8) Serial (SPI) nvSRAM with Real Time Clock
Features
256-Kbit nonvolatile static random access memory (nvSRAM)
Internally organized as 32 K × 8
STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by user using
HSB pin (Hardware STORE) or SPI instruction (Software
STORE)
RECALL to SRAM initiated on power-up (Power-Up
RECALL) or by SPI instruction (Software RECALL)
Automatic STORE on power-down with a small capacitor
High reliability
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years
Real time clock (RTC)
Full-featured RTC
Watchdog timer
Clock alarm with programmable interrupts
Capacitor or battery backup for RTC
Backup current of 0.35 µA (typical)
High-speed serial peripheral interface (SPI)
40-MHz clock rate – SRAM memory access
25-MHz clock rate – RTC memory access
Supports SPI mode 0 (0,0) and mode 3 (1,1)
Logic Block Diagram
Write protection
Hardware protection using Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
Single 3 V +20%, –10% operation
Average active current of 10 mA at 40 MHz operation
Industry standard configurations
Industrial temperature
16-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Overview
The Cypress CY14B256P combines a 256-Kbit nvSRAM[1] with
a full-featured real time clock in a monolithic integrated circuit
with serial SPI interface. The memory is organized as 32 K words
of 8 bits each. The embedded nonvolatile elements incorporate
the QuantumTrap technology, creating the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while the QuantumTrap cells provide highly reliable
nonvolatile storage of data. Data transfers from SRAM to the
nonvolatile elements (STORE operation) takes place
automatically at power-down. On power-up, data is restored to
the SRAM from the nonvolatile memory (RECALL operation).
The STORE and RECALL operations can also be initiated by the
user through SPI instruction.
VCC
VCAP
CS
WP
SCK
HOLD
SI
Instruction decode
Write protect
Control logic
QuantumTrap
32 K X 8
SRAM Array
32 K X 8
STORE
RECALL
Power Control
STORE/RECALL
Control
Instruction
register
Address
Decoder
A0-A14
D0-D7
Data I/O register
RTC
MUX
HSB
Xout
X in
INT
SO
Status Register
Note
1. This device will be referred to as nvSRAM throughout the document.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-53881 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised July 19, 2011

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