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CY62136CV18 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY62136CV18
Cypress
Cypress Semiconductor Cypress
CY62136CV18 Datasheet PDF : 12 Pages
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CY62136CV18 MoBL2
Electrical Characteristics Over the Operating Range
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
Test Conditions
IOH = −0.1 mA
IOL = 0.1 mA
VCC = 1.65V
VCC = 1.65V
VIL
Input LOW Voltage
IIX
Input Leakage Current GND < VI < VCC
IOZ
Output Leakage
GND < VO < VCC, Output Disabled
Current
VCC Operating Supply f = fMAX = 1/tRC VCC = 1.95V
ICC
Current
f = 1 MHz
IOUT = 0 mA
CMOS levels
Automatic CE
CE > VCC 0.2V,
ISB1
Power-Down Cur-
VIN > VCC0.2V, VIN < 0.2V
rentCMOS Inputs f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE, and BLE)
Automatic CE
CE > VCC0.2V
ISB2
Power-Down Cur-
VIN > VCC 0.2V or VIN < 0.2V,
rentCMOS Inputs f = 0, VCC = 1.95V
CY62136CV18-55
Min. Typ.[4] Max.
1.4
0.2
1.4
VCC +
0.2V
0.2
0.4
1
+1
1
+1
2
7
0.5
2
1
8
CY62136CV18-70
Min. Typ.[4] Max.
1.4
0.2
1.4
VCC +
0.2V
0.2
0.4
1
+1
1
+1
1.5
6
0.5
2
1
8
Unit
V
V
V
V
µA
µA
mA
mA
µA
Capacitance[5]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC= VCC(typ)
Max.
Unit
6
pF
8
pF
Thermal Resistance
Description
Test Conditions
Thermal Resistance
(Junction to Ambient)[5]
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed
circuit board
Thermal Resistance
(Junction to Case)[5]
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Symbol
ΘJA
ΘJC
BGA
55
16
Unit
°C/W
°C/W
Document #: 38-05016 Rev. *C
Page 3 of 12

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