CY62148VN 데이터 시트보기 (PDF) - Cypress Semiconductor
부품명
상세내역
제조사
CY62148VN Datasheet PDF : 11 Pages
| |||
CY62148VN MoBL®
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied .............................................. 55°C to +125°C
Supply Voltage to Ground Potential................–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[2].................................... –0.5V to VCC + 0.5V
Electrical Characteristics
DC Input Voltage[2] ................................ –0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40°C to +85°C
VCC
2.7V to 3.6V
Over the Operating Range
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
IOH = –1.0 mA
IOL = 2.1 mA
Test Conditions
VCC = 2.7V
VCC = 2.7V
VCC = 3.6V
VIL
Input LOW Voltage
VCC = 2.7V
IIX
Input Load Current
GND < VI < VCC
IOZ
Output Leakage Current GND < VO < VCC, Output Disabled
ICC
VCC Operating Supply IOUT = 0 mA, f = fMAX = 1/tRC
VCC = 3.6V
Current
CMOS Levels
IOUT = 0 mA, f = 1 MHz CMOS Levels
ISB1
Automatic CE
CE > VCC − 0.3V, VIN > VCC − 0.3V or VIN < 0.3V,
Power down Current— f = fMAX
CMOS Inputs
ISB2
Automatic CE
CE > VCC − 0.3V
Power down Current— VIN > VCC − 0.3V
CMOS Inputs
or VIN < 0.3V, f = 0
VCC = 3.6V
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
CY62148VN-70
Min. Typ.[1] Max.
2.4
0.4
2.2
VCC +
0.5V
–0.5
0.8
–1
+1
+1
–1
+1
+1
7
15
Unit
V
V
V
V
μA
μA
mA
1
2
mA
2
20
μA
Parameter
Description
CIN
COUT
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 3.0V
Max Unit
6
pF
8
pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
ΘJA Thermal Resistance
(Junction to Ambient)
ΘJC Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch,
four-layer printed circuit board
TSOP II SOIC
TBD TBD
TBD TBD
Unit
°C/W
°C/W
Note
2. VIL(min.) = –2.0V for pulse durations less than 20 ns.
Document #: 001-55636 Rev. **
Page 3 of 11
[+] Feedback
Share Link: 