HM62V256 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM62V256

32,768-word × 8-bit Low Voltage Operation CMOS Static RAM

Hitachi -> Renesas Electronics 

Function Table

WE CS

OE

X

H

X

H

L

H

H

L

L

L

L

H

L

L

L

Note: X: H or L

Mode

Not selected

Output disable

Read

Write

Write

VCC Current

ISB, ISB1

ICC

ICC

ICC

ICC

HM62V256 Series

I/O Pin

High-Z

High-Z

Dout

Din

Din

Ref. Cycle

—

—

Read cycle (1)–(3)

Write cycle (1)

Write cycle (2)

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Power supply voltage*1

Terminal voltage*1

VCC

–0.5 to 4.6

V

VT

–0.5*2 to VCC+0.5*3

V

Power dissipation

Operating temperature

PT

1.0

W

Topr

0 to + 70

°C

Storage temperature

Tstg

–55 to +125

°C

Storage temperature under bias

Tbias

–10 to +85

°C

Notes: 1. Relative to VSS

2. VT min: –3.0 V for pulse half-width ≤ 50 ns

3. Maximum voltage is 4.6V

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC

2.7

3.0

VSS

0

0

Input high(logic 1) voltage

VIH

0.7VCC

—

Input low(logic 0) voltage

VIL

–0.3 *1

—

Note: 1. VT min: –3.0 V for pulse half-width ≤ 50 ns

Max

3.6

0

VCC+0.3

0.2VCC

Unit

V

V

V

V

5

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