HM62V256 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM62V256

32,768-word × 8-bit Low Voltage Operation CMOS Static RAM

Hitachi -> Renesas Electronics 

HM62V256 Series

DC Characteristics (Ta = 0 to +70°C, VCC = 2.7 V to 3.6V, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage current

|ILI|

—

|ILO|

—

Operating power supply current ICCDC1 —

(DC)

ICCDC2

—

Average

HM62V256-7 ICCAC1

—

operating power

supply current

HM62V256-8 ICCAC1

—

HM62V256-10 ICCAC1

—

ICCAC2

—

Standby power supply current ISB

—

ISB1

—

—

—1

µA

VSS ≤ Vin ≤ VCC

—1

µA

CS = VIH or OE = VIH or WE = VIL,

VSS ≤ VI/O ≤ VCC

—

15

mA CS = VIL, others = VIH/VIL

II/O = 0 mA

—

10

mA CS ≤ 0.2 V, VIH ≥ VCC – 0.2 V,

VIL ≤ 0.2 V, II/O = 0 mA

— 30 mA min cycle, duty = 100 %,

II/O = 0 mA CS = VIL,

others = VIH/VIL

— 27

— 24

— 15 mA Cycle time ≥ 1 µs, duty = 100%

II/O = 0 mA, CS ≤ 0.2 V,

VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V

0.1 1

mA CS = VIH

0.05 50 µA Vin ≥ 0 V, CS ≥ VCC – 0.2 V,

0.05 10*2

—

0.05 4*3

Output low voltage

Output high voltage

VOL

—

— 0.2 V

IOL = 20 µA

VOH

VCC –

—

—

V

IOH = –20 µA

0.2

Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.

2. This characteristic is guaranteed only for L-SL version.

3. This characteristic is guaranteed only for L-UL version.

Capacitance (Ta = 25°C, f = 1.0 MHz)

Parameter

Symbol

Min Typ

Input capacitance*1

Cin

—

—

Input/output capacitance*1

CI/O

—

—

Note: 1. This parameter is sampled and not 100% tested.

Max

5

8

Unit

pF

pF

Test Conditions

Vin = 0 V

VI/O = 0 V

6

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