CY7C197 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY7C197

256Kx1 Static RAM

Cypress Semiconductor 

CY7C197

Electrical Characteristics Over the Operating Range (continued)

Parameter

Description

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

Test Conditions

VCC = Min., IOH = −4.0 mA

VCC = Min. IOL=12.0mA

7C197-20

Min. Max.

2.4

0.4

7C197-25, 35, 45

Min. Max. Unit

2.4

V

0.4

V

VIH

Input HIGH Voltage

2.2

VCC

2.2

VCC

V

+ 0.3V

+ 0.3V

VIL

Input LOW Voltage[1]

−0.5

0.8

−0.5

0.8

V

IIX

Input Load Current

GND < VI < VCC

−5

+5

−5

+5

µA

IOZ

Output Leakage Current GND < VO < VCC, Output Disabled

−5

+5

−5

+5

µA

IOS

Output Short

Circuit Current[2]

VCC = Max., VOUT = GND

−300

−300 mA

ICC

VCC Operating

Supply Current

VCC = Max., IOUT = 0 mA,

f = fMAX = 1/tRC

ISB1

Automatic CE Power Down

Current—TTL Inputs[3]

Max. VCC, CE > VIH, VIN > VIH or

VIN < VIL, f = fMAX

ISB2

Automatic CE Power-Down

Current—CMOS Inputs[3]

Max. VCC, CE > VCC − 0.3V,

VIN > VCC − 0.3V or VIN < 0.3V

135

95 mA

30

30 mA

15

15 mA

Capacitance[4]

Parameter

CIN

COUT

Description

Input Capacitance

Output Capacitance

Test Conditions

TA = 25°C, f = 1 MHz,

VCC = 5.0V

Max.

Unit

8

pF

10

pF

AC Test Loads and Waveforms[5]

5V

OUTPUT

R1 329Ω

5V

OUTPUT

R1 329Ω

30 pF

INCLUDING

JIG AND

SCOPE

R2

5 pF

202Ω

(255Ω MIL) INCLUDING

JIG AND

(a)

SCOPE (b)

Equivalent to: THÉVENIN EQUIVALENT

125Ω

OUTPUT

1.90V

Commercial

R2

255Ω

(255Ω MIL)

C197-4

3.0V

GND

10%

< tr

ALL INPUT PULSES

90%

90%

10%

< tr

C197-5

Notes:

4. Tested initially and after any design or process changes that may affect these parameters.

5. tr = < 3 ns for the -12 and -15 speeds. tr = < 5 ns for the -20 and slower speeds.

Document #: 38-05049 Rev. **

Page 3 of 10

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