CY7C199D-10VXI 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY7C199D-10VXI

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY7C199D

Document History Page

Document Title: CY7C199D 256K (32K x 8) Static RAM

Document Number: 38-05471

Revision

ECN

Orig. of Submission

Change

Date

Description of Change

**

201560

SWI

See ECN Advance Information datasheet for C9 IPP

*A

233728

RKF

See ECN DC parameters modified as per EROS (Spec # 01-02165)

Pb-free Offering in Ordering Information

*B

262950

RKF

See ECN Removed 28-LCC Pinout and Package Diagrams

Added Data Retention Characteristics table

Added Tpower Spec in Switching Characteristics table

Shaded Ordering Information

*C

307594

RKF

See ECN Reduced Speed bins to -10, -12 and -15 ns

*D

820660

VKN

See ECN Converted from Preliminary to Final

Removed 12 ns and 15 ns speed bin

Removed Commercial Operating range

Removed “L” part

Removed 28-pin PDIP and 28-pin SOIC package

Changed Overshoot spec from VCC+2V to VCC+1V in footnote #2

Changed ICC spec from 60 mA to 80 mA for 100 MHz speed bin

Added ICC specs for 83 MHz, 66 MHz and 40 MHz speed bins

Updated Thermal Resistance table

Updated Ordering Information Table

*E

2745093 VKN

See ECN Included 28-Pin SOIC package

Changed VIH level from 2.0V to 2.2V

For Industrial grade, changed tSD from 5 ns to 6 ns, and tHZWE from 6 ns to 5 ns

Included Automotive-E information

Document #: 38-05471 Rev. *E

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