IS62C256-45UI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62C256-45UI

32K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62C256

32K x 8 LOW POWER CMOS STATIC RAM

ISSI ®

FEATURES

• Access time: 45, 70 ns

• Low active power: 200 mW (typical)

• Low standby power

— 250 µW (typical) CMOS standby

— 28 mW (typical) TTL standby

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V power supply

DESCRIPTION

The ISSI IS62C256 is a low power, 32,768 word by 8-bit

CMOS static RAM. It is fabricated using ISSI's high-

performance, low power CMOS technology.

When CS is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down to

250 µW (typical) at CMOS input levels.

Easy memory expansion is provided by using an active LOW

Chip Select (CS) input and an active LOW Output Enable (OE)

input. The active LOW Write Enable (WE) controls both writing

and reading of the memory.

The IS62C256 is pin compatible with other 32K x 8 SRAMs in

plastic SOP or TSOP (Type I) package.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

VCC

GND

I/O0-I/O7

DECODER

32K X 8

MEMORY ARRAY

I/O

DATA

CIRCUIT

COLUMN I/O

CS

CONTROL

OE

CIRCUIT

WE

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which

may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

1

SR072-1E

05/12/99

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