IS62C256-45TI 데이터 시트보기 (PDF) - Integrated Silicon Solution
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IS62C256-45TI Datasheet PDF : 8 Pages
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IS62C256
ISSI ®
DATA RETENTION CHARACTERISTICS
Symbol
VDR
IDR1
IDR2
Parameter
VCC for retention of data
Data retention current
Data retention current
Test Conditions
VDR = 3.0V, TA = 0°C to +25°C
VDR = 3.0V, TA = 0°C to +70°C
Min.
2.0
—
—
Max.
—
200
200
Units
V
µA
µA
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
tRC Read Cycle Time
tAA Address Access Time
tOHA
tACS
tDOE
tLZOE(2)
tHZOE(2)
tLZCS(2)
tHZCS(2)
tPU(3)
tPD(3)
Output Hold Time
CS Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CS to Low-Z Output
CS to High-Z Output
CS to Power-Up
CS to Power-Down
-45 ns
-70 ns
Min. Max.
Min. Max.
Unit
45 —
70
—
ns
— 45
—
70
ns
2—
2
—
ns
— 45
—
70
ns
— 25
—
35
ns
0—
0
—
ns
0 20
0
25
ns
3—
3
—
ns
0 20
0
25
ns
0—
0
—
ns
— 30
—
50
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
480 Ω
5V
OUTPUT
100 pF
Including
jig and
scope
255 Ω
Figure 1.
4
480 Ω
5V
OUTPUT
5 pF
Including
jig and
scope
Figure 2.
255 Ω
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
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