D1208 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D1208 Datasheet PDF : 2 Pages
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D1208UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
1
gfs
Forward Transconductance*
VDS = 10V
ID = 2A
1.6
TOTAL DEVICE
GPS Common Source Power Gain
PO = 40W
10
η
Drain Efficiency
VDS = 12.5V
IDQ = 1.6A
50
VSWR Load Mismatch Tolerance
f = 400MHz
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
2
mA
1
µA
5.5
V
S
dB
%
—
120 pF
80
pF
8
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
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