STD38NH02L-1 데이터 시트보기 (PDF) - STMicroelectronics

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STD38NH02L-1

N-channel 24V - 0.011Ω - 38A - DPAK/IPAK STripFET™ III Power MOSFET

STMicroelectronics 

STD38NH02L - STD38NH02L-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Vspike (1) Drain-source voltage rating

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS

Gate- source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

Derating Factor

EAS (3)

Single pulse avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Garanted when external Rg=4.7 Ω and tf < tfmax.

2. Pulse width limited by safe operating area.

3. Starting Tj = 25 °C, ID = 19A, VDD = 18V

Value

30

24

24

± 20

38

27

152

40

0.27

250

-55 to 175

Unit

V

V

V

V

A

A

A

W

W/°C

mJ

°C

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering purpose

3.75

°C/W

100

°C/W

275

°C

3/16

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