D44D1 데이터 시트보기 (PDF) - Inchange Semiconductor

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D44D1

Silicon NPN Darlington Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistors

D44D1/2/3/4/5/6

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

D44D1

D44D2

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

D44D3

D44D4

IC= -30mA ;IB=B 0

D44D5

D44D6

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA

VBE(on) Base-Emitter On Voltage

IC= -5A ; VCE= -4V

VECF-1 C-E Diode Forward Voltage

IF= -5A

ICEO

Collector Cutoff Current

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 1/2VCEOmax; IB= 0

VCB= VCBOmax;IE= 0

VCB= 1/2VCBOmax;IE= 0;TC= 150℃

VEB= -5V; IC=0

hFE

DC Current Gain

IC= -1A ; VCE= -2V

MIN TYP. MAX UNIT

-60

-80

-100

-120

2000

V

-2.0 V

-3.0 V

-2.5 V

-2.0 V

-0.2 mA

-0.4

-2.0

mA

-5 mA

isc Website：www.iscsemi.cn

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