DAN217W(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor
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DAN217W Datasheet PDF : 3 Pages
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DAN217W
zElectrical characteristics curves
1000
Ta=125°
100
Ta=75°
10 Ta=150°C
1
Ta=25°
Ta=-25°
0.1
0.01
0
200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
0.1
0
Ta=150°C
Ta=125°
Ta=75°
Ta=25°
Ta=-25°
20
40
60
80 100 120
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10
1
0.1
0
920
200
Ta=25°C
180
910
VF=100mA
160
n=30pcs
140
1
Ta=25°C
0.9
VR=80V
n=30pcs
0.8
0.7
900
120
0.6
100
0.5
890
80
0.4
60
0.3
880
40
AVE:20.90
0.2
AVE:888.3
20
0.1
870
0
0
VF DISPERSION MAP
IR DISPERSION MAP
Data Sheet
f=1MH
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25°
C
f=1MHz
VR=0.5V
AVE:0.595
Ct DISPERSION MAP
20
15
10
5
0
10
5
0
0.1
Ifsm
1cyc
8.3ms
AVE:3.9
IFSM DISPERSION MAP
Ifsm
t
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
2
10
Ta=25°C
VR=6V
Ifsm
1.8
IF=10mA
RL=100Ω
n=10pcs
1.6
8.3ms 8.3ms
1cyc
5
1.4
1.2
AVE:1.489
1
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
10
Rth(j-a)
9
8
100
7
Rth(j-c)
6
5
Mounted on epoxy board
4
10
IM=1m
IF=10m
3
1ms time
2
1
1
300us
0.001 0.01 0.1
1
10 100 1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
AVE:1.60
AVE:6.48
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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2/2
2009.12 - Rev.A
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