DIM400GDM33-A000 데이터 시트보기 (PDF) - Dynex Semiconductor
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DIM400GDM33-A000 Datasheet PDF : 10 Pages
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DIM400GDM33-A000
TYPICAL CHARACTERISTICS
800
Common emitter.
Tcase = 25˚C
700
600
500
400
300
200
100
0
0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
1
2
3
4
5
6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
900
Conditions:
Tcase = 125˚C
800 Rg = 4.7 Ohms
Vcc = 1800V
Cge = 68nF
700
600
500
400
300
200
100
0
0
Eon
Eoff
Erec
100
200
300
400
500
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
800
Common emitter.
Tcase = 125˚C
700
600
500
400
300
200
100
0
1
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
2
3
4
5
6
7
8
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1400
Conditions:
Tcase = 125˚C
IC = 400A
1200 Vcc = 1800V
Cge = 68nF
1000
800
600
400
200
Eon
Eoff
Erec
0
3 4 5 6 7 8 9 10 11 12
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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