GP800NSS33 데이터 시트보기 (PDF) - Dynex Semiconductor

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GP800NSS33

Single Switch IGBT Module

Dynex Semiconductor 

GP800NSS33

ELECTRICAL CHARACTERISTICS

T = 25˚C unless stated otherwise.

case

Symbol

Parameter

ICES

Collector cut-off current

IGES

VGE(TH)

VCE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

IFM

Diode maximum forward current

VF

Diode forward voltage

Cies

Input capacitance

LM

Module inductance

Test Conditions

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

I = 120mA, V = V

C

GE

CE

VGE = 15V, IC = 800A

VGE = 15V, IC = 800A, , Tcase = 125˚C

DC

t = 1ms

p

IF = 800A

IF = 800A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

-

Min. Typ. Max. Units

-

-

2

mA

-

-

70 mA

-

-

12 µA

4

-

7.5

V

-

3.6

4.3

V

-

4.5

5

V

-

-

800 A

-

-

1600 A

-

2.3

2.9

V

-

2.4

3

V

-

200

-

nF

-

15

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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