DIM800NSM33-A000
100
1400
Diode
1200
Transistor
1000
10
800
1
0.1
0.001
IGBT
Diode
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
1
0.3747
0.0876
0.7386
0.0843
2
3
4
1.9652 2.7777 8.4016
3.7713 33.5693 236.8023
3.9115 5.5628 16.8308
3.7205 33.2138 236.5275
0.01
0.1
1
10
Pulse width, tp - (s)
Fig. 11 Transient thermal impedance
600
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 12 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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