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CM1200HB-66H

HIGH POWER SWITCHING USE INSULATED TYPE

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MITSUBISHI HVIGBT MODULES

CM1200HB-66H

HIGH POWER SWITCHING USE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HB-66H

q IC ................................................................ 1200A

q VCES ....................................................... 3300V

q Insulated Type

q 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

57±0.25

190

171

57±0.25

57±0.25

6 - M8 NUTS

C

C

C

C

C

C

C

G

E

E

E

E

CM

E

E

CEG

3 - M4 NUTS

20.25

41.25

79.4

61.5

61.5

13

E

CIRCUIT DIAGRAM

8 - φ7MOUNTING HOLES

15

40

5.2

LABEL

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Feb. 2000

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