DG2001(2001) 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG2001 Datasheet PDF : 8 Pages
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New Product
DG2001
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Analog Signal Ranged
On-Resistance
rON Flatnessd
Switch Off Leakage Currentg
Channel-On Leakage Currentg
VNO, VNC,
VCOM
rON
rON
Flatness
INO(off),
INC(off)
ICOM(off)
V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA
V+ = 2.7 V
VCOM = 0 to V+, INO, INC = 10 mA
V+ = 3.3 V, VNO, VNC = 1 V/3 V
VCOM = 3 V/1 V
ICOM(on)
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
VINH
Full
VINL
Full
Cin
Full
IINL or IINH
VIN = 0 or V+
Full
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
Power Supply
tON
tOFF
td
QINJ
OIRR
XTALK
CNO(off),
CNC(off)
CON
VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
RL = 50 W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
VIN = 0 or V+
Limits
–40 to 85_C
Minb Typc Maxb
0
V+
5
9.2
6
10.2
3
–400
400
–4.5
4.5
–400
400
–4.5
4.5
–450
450
–4.5
4.5
2
0.4
4
1
1
24
45
48
12
30
33
1
13
3
10
–71
–70
17
50
2.7
3.3
0.01
1.0
3.3
Unit
V
W
pA
nA
pA
nA
pA
nA
V
pF
mA
ns
pC
dB
pF
V
mA
mW
Document Number: 71398
S-03281—Rev. B, 19-Mar-01
www.vishay.com
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