DG2012DL 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
DG2012DL Datasheet PDF : 8 Pages
| |||
DG2012
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 5.0 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Limits
-40 to 85_C
Minb Typc Maxb
Analog Signal Ranged
On-Resistance
rON Flatnessd
rON Matchd
Switch Off Leakage Current
Channel-On Leakage Current
VNO, VNC,
VCOM
Full
0
V+
rON
V+ = 4.5 V, VCOM = 0.5 V/2.5 V
INO, INC = 10 mA
Room
Full
1.0
1.8
1.2
1.9
rON
Flatness
DrON
V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
Room
0.55
0.25
INO(off),
INC(off)
V+ = 5.0 V
Room
- 0.5
0.5
Full
- 5.0
5.0
ICOM(off)
VNO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V
Room
Full
- 0.5
- 5.0
0.5
5.0
ICOM(on)
V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V
Room
Full
- 0.5
- 5.0
0.5
5.0
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
VINH
VINL
Cin
IINL or IINH
VIN = 0 or V+
Full
2.4
Full
0.8
Full
3
Full
-1
1
Turn-On Timed
Turn-Off Timed
Break-Before-Make Timed
Charge Injectiond
Off-Isolationd
Crosstalkd
Source-Off Capacitanced
Channel-On Capacitanced
tON
tOFF
VNO or VNC = 3 V, RL = 300 W, CL = 35 pF
Figure 1 and 2
Room
Full
Room
Full
td
Room
1
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
Room
OIRR
XTALK
RL = 50 W, CL = 5 pF, f = 1 MHz
Room
Room
CNO(off),
CNC(off)
CON
VIN = 0 or V+, f = 1 MHz
Room
Room
17
38
39
13
32
33
20
- 63
- 64
20
56
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5-V leakage testing, not production tested.
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
www.vishay.com
4
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
Share Link: 