DG213(2000) 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG213 Datasheet PDF : 8 Pages
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DG213
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
VL
VS1
S1
IN1
VS2
S2
IN2
GND
V+
D1
VO1
D2
VO2
V–
–15 V
RL2
300 W
CL2
35 pF
RL1
300 W
CL1
35 pF
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make
Logic
3V
Input
0V
VS1
VO1
Switch
0V
Output
VS2
VO2
Switch
0V
Output
50%
90%
90%
tD
tD
+15 V
C
V+
VS
S
D
VO
Rg = 50 W
IN
RL
0V, 2.4 V
GND
V–
C
VS
Off Isolation = 20 log
VO
–15 V
FIGURE 4. Off Isolation
C
+15 V
V+
VS
S1
D1
Rg = 50 W
IN1
0V, 2.4 V
S2
D2
NC
0V, 2.4 V
IN2
C = RF bypass
VS
XTALK Isolation = 20 log
VO
GND
V–
C
–15 V
50 W
VO
RL
FIGURE 5. Channel-to-Channel Crosstalk
Rg
Vg
3V
+15 V
V+
S
D
IN
GND
V–
–15 V
www.vishay.com S FaxBack 408-970-5600
4-6
VO
CL
1000 pF
DVO
VO
INX ON
OFF
ON
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
FIGURE 6. Charge Injection
Document Number: 70662
S-00787—Rev. F, 17-Apr-00
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