DG213 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG213 Datasheet PDF : 14 Pages
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SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Currentf
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off-Isolation
Channel-to-Channel Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
Symbol
VANALOG
rDS(on)
ΔrDS(on)
IS(off)
ID(off)
ID(on)
VINH
VINL
IINL or IINH
CIN
tON
tOFF
tD
Q
CS(off)
CD(off)
CD(on)
OIRR
XTALK
I+
I-
IL
VOP
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V, VL = 5 V,
VIN = 2.4 V, 0.8 Ve
VD = ± 10 V, IS = 1 mA
VS = ± 14 V, VD = ± 14 V
VD = ± 14 V, VS = ± 14 V
VS = VD = 14 V
VINH or VINL
VS = 10 V
See Figure 2
VS = 10 V, See Figure 3
CL = 1000 pF, Vg = 0 V, Rg = 0 Ω
VS = 0 V, f = 1 MHz
VD = VS = 0 V, f = 1 MHz
CL = 15 pF, RL = 50 Ω
VS = 1 VRMS, f = 100 kHz
VIN = 0 or 5 V
DG213
Vishay Siliconix
D Suffix
- 40 °C to 85 °C
Temp.a Min.c Typ.b Max.c Unit
Full
V-
V+
V
Room
Full
Room
45
60
85
Ω
1
2
Room - 0.5 ± 0.01 0.5
Full
-5
5
Room - 0.5 ± 0.01 0.5
Full
-5
5
nA
Room - 0.5 ± 0.02 0.5
Full
- 10
10
Full
2.4
Full
V
0.8
Full
-1
1
µA
Room
5
pF
Room
Room
Room 15
Room
Room
Room
Room
Room
Room
85
130
55
100 ns
25
1
pC
5
5
pF
16
90
dB
95
Room
Full
Room - 1
Full
-5
Room
Full
Full
±3
1
5
µA
1
5
± 22 V
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
www.vishay.com
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