DG213 데이터 시트보기 (PDF) - Vishay Semiconductors

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DG213

y Quad Complementary CMOS Analog Switch

Vishay Semiconductors 

TEST CIRCUITS

DG213

Vishay Siliconix

+5V

VL

VS1

S1

IN1

VS2

S2

IN2

GND

+ 15 V

V+

D1

VO1

D2

VO2

V-

- 15 V

RL2

300 Ω

CL2

35 pF

RL1

300 Ω

CL1

35 pF

Logic

3V

Input

0V

VS1

VO1

Switch

0V

Output

VS2

VO2

Switch

0V

Output

50 %

90 %

90 %

tD

tD

CL (includes fixture and stray capacitance)

Figure 3. Break-Before-Make

C

+ 15 V

+ 15 V

C

V+

VS

S

D

VO

Rg = 50 Ω

IN

RL

0 V, 2.4 V

GND

V-

C

VS

Off Isolation = 20 log

VO

- 15 V

V+

VS

S1

D1

Rg = 50 Ω

IN1

0 V, 2.4 V

S2

D2

NC

0 V, 2.4 V

IN2

C = RF bypass

VS

XTA LK Isolation = 20 log

VO

GND

V-

C

- 15 V

50 Ω

VO

RL

Figure 4. Off Isolation

Figure 5. Channel-to-Channel Crosstalk

Rg

Vg

3V

+ 15 V

V+

S

D

IN

GND

V-

- 15 V

VO

CL

1000 pF

ΔVO

VO

INX ON

OFF

ON

ΔVO = measured voltage error due to charge injection

The charge injection in coulombs is Q = CL x ΔVO

Figure 6. Charge Injection

Document Number: 70662

S-80263-Rev. G, 11-Feb-08

www.vishay.com

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