DG445 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG445 Datasheet PDF : 12 Pages
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DG444, DG445
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
- 140
V+ = 15 V
70
V- = - 15 V
- 120
60
- 100
50
85 °C
- 80
40
25 °C
- 60
30
20
- 40 °C
0 °C
- 40
10
- 20
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
Crosstalk
Off Isolation
0
- 15 - 10 - 5
0
5
10
15
VD - Drain Voltage (V)
RDS(on) vs. VD and Temperature
0
100
1K
10K
100K
1M
10M
f - Frequency (Hz)
Crosstak and Off Isolation vs. Frequency
50
40
CL = 1 nF
30
20
V+ = 15 V
V- = - 15 V
10
0
V+ = 12 V
- 10
V- = 0 V
- 20
- 30
- 10
-5
0
5
10
VS - Source Voltage (V)
Charge Injection vs. Source Voltage
4
3
VL = 7 V
2
1
VL = 5 V
0
0
4
8
12
16
20
VSUPPLY (V)
Switching Threshold vs. Supply Voltage
20
IS(off) , ID(off)
0
10
IS(off), ID(off)
0
- 20
ID(on)
- 40
- 60
V+ = 15 V
- 80
V- = - 15 V
For I(off), VD = - VS
- 100
- 15 - 10
-5
0
5
10
15
VD or VS - Drain or Source Voltage (V)
Source/Drain Leakage Currents
- 10
IS(on) + ID(on)
- 20
- 30
- 40
0
V+ = 12 V
V- = 0 V
For ID, VS = 0 V
For IS, VD = 0 V
2
4
6
8
10
12
VD or VS - Drain or Source Voltage (V)
Source/Drain Leakage Currents
(Single 12-V Supply)
www.vishay.com
Document Number: 70054
4
S11-0984-Rev. G, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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