DMS3015SSS 데이터 시트보기 (PDF) - Diodes Incorporated.
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DMS3015SSS Datasheet PDF : 6 Pages
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DMS3015SSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
BVDSS
30
IDSS
-
IGSS
-
VGS(th)
1.0
RDS (ON)
-
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
-
VSD
-
Ciss
-
Coss
-
Crss
-
Rg
0.3
Qg
-
Qg
-
Qgs
-
Qgd
-
tD(on)
-
tr
-
tD(off)
-
tf
-
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Typ
-
-
-
1.5
8.5
9.5
18
0.45
1276
160
136
1.48
14.3
30.6
3.4
4.3
15.8
27.8
29.7
13.6
Max
-
0.1
±100
2.5
11.9
14.9
-
0.55
-
-
-
2.7
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
mA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 11A
VGS = 4.5V, ID = 8.8A
S VDS = 5V, ID = 10A
V VGS = 0V, IS = 1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, VGS = 4.5V, ID = 8.8A
nC
nC VDS = 15V, VGS = 10V, ID = 8.8A
nC
ns
ns VGS = 4.5V, VDS = 15V,
ns RG = 1.8Ω, ID =8.8A
ns
30
25
VGS = 4. 5V
VGS = 4. 0V
20
VGS = 3.5V
VGS = 3.0V
15
10
VGS = 2.5V
5
VGS = 2.0V
0
0
0.5
1.0
1.5
2.0
VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
30
25
VDS = 5V
20
15
10
TA = 150°C
5
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
1
2
3
4
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMS3015SSS
Document number: DS32096 Rev. 4 - 2
2 of 6
www.diodes.com
September 2010
© Diodes Incorporated
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