DRDNB21D-7 데이터 시트보기 (PDF) - Diodes Incorporated.
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DRDNB21D-7 Datasheet PDF : 7 Pages
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DRDNB21D
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Junction Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Base-Emitter Voltage
Output Current
Peak Collector Current
Symbol
VCC
Vin
IO
ICM
Value
50
-5 to +12
100
100
Unit
V
V
mA
mA
Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
100
75
53
500
250
4.0
1.0
Unit
V
V
V
mA
mA
A
Electrical Characteristics, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
Symbol Min Typ Max Unit
Test Condition
Vl(off)
0.5
⎯⎯
V VCC = 5V, IO = 100μA
Vl(on)
⎯
⎯ 1.1
V VO = 0.3V, IO = 5mA
VO(on)
⎯
⎯ 0.3
V IO/Il = 50mA/0.25mA
Il
⎯
⎯ 3.6
mA VI = 5V
IO(off)
⎯
⎯ 0.5
uA VCC = 50V, VI = 0V
Gl
80
⎯⎯
⎯ VO = 5V, IO = 10mA
ΔR1
-30
⎯ +30
%
-
ΔR2/R1 -20
⎯ +20
%
-
fT
⎯
250 ⎯
MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
Min
75
0.62
⎯
⎯
⎯
IR
⎯
CT
⎯
trr
⎯
Max
⎯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
IR = 10μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.
DRDNB21D
Document number: DS30756 Rev. 6 - 2
2 of 7
www.diodes.com
February 2011
© Diodes Incorporated
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