DS1217M 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated
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DS1217M Datasheet PDF : 8 Pages
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POWER-DOWN/POWER-UP CONDITION
VCC
4.50V
DS1217M
3.2V
tF
tPD
tR
tREC
CE
LEAKAGE CURRENT IL
SUPPLIED FROM LITHIUM CELL
DATA RETENTION TIME
tDR
POWER-DOWN/POWER-UP TIMING
(0° to 70°C)
PARAMETER
SYMBOL MIN
TYP
MAX
UNITS NOTES
CE at VIH before Power-Down
VCC slew from 4.5V to 0V
(CE at VIH)
VCC slew from 0V to 4.5V
(CE at VIH)
CE at VIH after Power-Up
tPD
0
tF
100
tR
0
tREC
2
µs
10
µs
µs
125
ms
10
PARAMETER
(tA=25°C)
SYMBOL MIN
TYP
MAX
UNITS NOTES
Expected Data Retention Time
tDR
5
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode.
030598 7/8
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