DS1225AD170 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS1225AD170

16k Nonvolatile SRAM

Dallas Semiconductor -> Maxim Integrated 

POWER-DOWN/POWER-UP CONDITION

DS1225AB/AD

SEE NOTE 11

POWER-DOWN/POWER-UP TIMING

PARAMETER

SYMBOL

CE at VIH before Power-Down

tPD

VCC slew from VTP to 0V

tF

VCC slew from 0V to VTP

tR

CE at VIH after Power-Up

tREC

PARAMETER

Expected Data Retention Time

SYMBOL

tDR

MIN

0

300

300

2

MIN

10

TYP

TYP

(TA : See Note 10)

MAX UNITS NOTES

µs

11

µs

µs

125 ms

(TA = 25°C)

MAX UNITS NOTES

years

9

WARNING:

Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery

backup mode.

7 of 10

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