DS1315 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated
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DS1315 Datasheet PDF : 21 Pages
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DS1315 Phantom Time Chip
AC ELECTRICAL OPERATING CHARACTERISTICS
ROM/RAM = VCCO
PARAMETER
(0°C to 70°C; VCC = 5.0 ± 10%)
SYMBOL MIN TYP
MAX
UNITS NOTES
Read Cycle Time
CEI Access Time
tRC
65
tCO
ns
55
ns
OE Access Time
tOE
55
ns
CEI to Output Low Z
tCOE
5
ns
OE to Output Low Z
tOEE
5
ns
CEI to Output High Z
tOD
25
ns
OE to Output High Z
tODO
25
ns
Address Setup Time
tAS
5
ns
Address Hold Time
tAH
5
ns
Read Recovery
tRR
10
ns
Write Cycle
tWC
65
ns
CEI Pulse Width
tCW
55
ns
OE Pulse Width
tOW
55
ns
Write Recovery
Data Setup
Data Hold Time
RST Pulse Width
tWR
10
tDS
30
tDH
0
tRST
65
ns
4
ns
5
ns
5
ns
DC OPERATING ELECTRICAL CHARACTERISTICS
(0°C to 70°C; VCC = 3.3 ± 10%)
PARAMETER
SYMBOL MIN TYP
MAX
UNITS NOTES
Average VCC Power
ICC1
Supply Current
3
mA
6
Average VCC Power
Supply Current,
ICC01
100
mA
7
(VCCO = VCCI-0.3)
TTL Standby Current
ICC2
2
mA
6
( CEI = VIH)
CMOS Standby Current
ICC3
1
mA
6
( CEI = VCCI-0.2)
Input Leakage Current
(any input)
IIL
-1
+1
µA
Output Leakage Current
(any input)
ILO
-1
+1
µA
Output Logic 1 Voltage
(IOUT = 0.4 mA)
VOH
2.4
V
2
Output Logic 0 Voltage
(IOUT = 1.6 mA)
Power-Fail Trip Point
VOL
VPF
2.8
0.4
V
2
2.97
V
Battery Switch Voltage
VSW
VBAT1,
14
VBAT2,
or VPF
10 of 21
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