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DS1315 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS1315
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS1315 Datasheet PDF : 21 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
DS1315 Phantom Time Chip
DC POWER DOWN ELECTRICAL CHARACTERISTICS
(0°C to 70°C; VCC < 2.97V)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
CEO Output Voltage
VCEO
VCCI
or
V
8
VBAT1,2
-0.2
VBAT1 OR VBAT2
IBAT
Battery Current
0.3
µA
6
Battery Backup Current
@ VCCO = VBAT-0.2
ICCO2
10
µA
9
AC ELECTRICAL OPERATING CHARACTERISTICS
ROM/RAM = GND
PARAMETER
SYMBOL MIN
(0°C to 70°C; VCC = 3.3 ± 10%)
TYP MAX UNITS NOTES
Read Cycle Time
CEI Access Time
tRC
120
tCO
ns
100
ns
OE Access Time
tOE
100
ns
CEI to Output Low Z
tCOE
5
ns
OE to Output Low Z
tOEE
5
ns
CEI to Output High Z
tOD
40
ns
OE to Output High Z
tODO
40
ns
Read Recovery
Write Cycle
Write Pulse Width
Write Recovery
Data Setup
Data Hold Time
CEI Pulse Width
tRR
20
tWC
120
tWP
100
tWR
20
tDS
45
tDH
0
tCW
100
ns
ns
ns
ns
4
ns
5
ns
5
ns
OE Pulse Width
tOW
100
ns
RST Pulse Width
tRST
120
ns
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