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DS1610 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS1610
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS1610 Datasheet PDF : 10 Pages
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NOTES:
1. All voltages are reference to ground
DS1610
2. Only one battery input is required.
3. Measured with outputs open circuited.
4. ICC01 is the maximum average load which the DS1610 can supply to the memories.
5. ZCE is an average input-to-output impedance as the input is swept from ground to VCCI and less than 4
mA is forced through ZCE.
6. ICC02 is the maximum average load current which the DS1610 can supply to the memories in the
battery backup mode.
7. tCE max must be met to insure data integrity on power loss.
8. Chip Enable Output CEO can only sustain leakage current in the battery mode.
9. Applies only when loading partition switch.
10. Measured with a load as shown in Figure 1.
11. Measured with DIS at a logic high level.
12. CEO and WEO will be held high for a time equal to tREC (max = 125 ms) after VCCI crosses VCCTP.
13. tR is the slew rate of VCCI from 4.25V to 4.75V.
14. CEI , WEI , AW - AZ run at minimum timing set and at voltage levels of 0V to 3V.
15. All inputs within 0.3V of ground or VCCI and CEI within 0.3V of VCCI.
16. The power-fail output signal ( PFO ) is driven active (VOL = 0.4V) when the VCC trip point occurs.
While active, the PFO pin can sink 4 mA and will maintain a maximum output voltage of 0.4 volts.
When inactive, the voltage output of PFO is 2.4 volts minimum and will source a current of 1 mA.
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