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RMWP38001

37-40 GHz Power Amplifier MMIC

Raytheon Company 

RMWP38001

37-40 GHz Power Amplifier MMIC

PRODUCT INFORMATION

Application

Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal

conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,

plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for

PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination

of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including

the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent

static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical

allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding

to a typically 2 mil between the chip and the substrate material.

Figure 1

Functional Block

Diagram

RF IN

Drain Supply Drain Supply Drain Supply Drain Supply Reference Detector Voltage

Vd1

Vd2

Vd3

Vd4

Vref (not connected to circuit)

MMIC Chip

RF OUT

Ground

(Back of Chip)

Gate Supply

Vg

Output Power

Detector Voltage Vdet

Figure 2

Chip Layout and Bond

Pad Locations

Chip Size is 3.4 mm x

1.4 mm. Back of chip is

RF and DC ground

Note:

For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to

measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.

Dimensions in mm

0.0

1.4

0.545

1.05

1.55

3.0375

3.4

1.4

0.8355

0.686

0.5365

0.8315

0.682

0.5325

www.raytheon.com/micro

0.0

0.0

0.376

Characteristic performance data and specifications are subject to change without notice.

Revised March 14, 2001

Page 2

0.0

3.4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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