DTA115E(2005) 데이터 시트보기 (PDF) - Unisonic Technologies
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DTA115E Datasheet PDF : 2 Pages
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DTA115E
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCC
VIN
IOUT
Ic(max)
PD
TJ
TSTG
RATINGS
-50
-40~+10
-20
-100
200
150
-40 ~ +150
UNIT
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Voltage
VIN(off)
VIN(ON)
VCC= -5V, IOUT=-100μA
VOUT= -0.3V,IOUT= -1mA
Output Voltage
VOUT(ON) IOUT= -5mA, IIN= -0.25 mA
Input Current
IIN
VIN= -5V
Output Current
IOUT(off) VCC= -50V , VIN=0V
DC Current Gain
GI
VOUT= -5V,IOUT= -5mA
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
VCE= -10 V, IE= 5mA, f=100MHz *
*Transition frequency of the device
MIN TYP
-3
-0.1
82
70
100
0.8
1
250
MAX
-0.5
-0.3
-0.15
-0.5
130
1.2
UNIT
V
V
mA
μA
kΩ
MHz
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, even m om entarily, rated values (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R220-016,A
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