DTA043TUB(2010) 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTA043TUB
(Rev.:2010)

-100mA/-50V Digital transistors(with built-in resistors)

ROHM Semiconductor 

DTA043TM / DTA043TEB / DTA043TUB 　

Electrical characteristics (Ta=25C)

Parameter

Symbol

Collector-Base breakdown voltage BVCBO

Collector-Emitter breakdown voltage BVCEO

Emitter-Base breakdown voltage

BVCEO

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

Collector-Emitter saturation voltage VCE(sat)

DC current gain

hFE

Transition frequency *

fT

Input resistance

R1

* Characteristics of built-in transistor

Min.

-50

-50

-5

-

-

-

100

-

3.29

Typ.

-

-

-

-

-

-0.07

-

250

4.7

Max.

-

-

-

-500

-500

-0.15

600

-

6.11

Data Sheet

Unit

V

V

V

nA

nA

V

-

MHz

kΩ

Test Conditions

IC=-50uA

IC=-1mA

IE=-50uA

VCB=-50V

VEB=-4V

IC=-5mA / IB=-0.5mA

VCE=-10V / IC=-0.5mA

VCE=-10V / IC=-5mA

f=100MHz

Electrical characteristics curves

1000

VCE=-10.0V

-1

IC/IB=10

100

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-40℃

10

-0.1

-0.01

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-40℃

1

-0.1

-1

-10

COLLECTOR CURRENT : IC (mA)

-100

Fig.1 DC Current Gain vs. Collector Current

-0.001

-0.1

-1

-10

COLLECTOR CURRNET : IC (mA)

-100

Fig.2 Collector Saturation Voltage vs. Collector Current

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2010.09 - Rev.A

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