DTA124E-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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DTA124E-AE3-R

PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

Unisonic Technologies 

DTA124E

■ TYPICAL CHARACTERICS

PNP EPITAXIAL SILICON TRANSISTOR

Fig.1 Input voltage vs.output current

(ON characterristics)

-100

Vo=-0.3V

-50

-20

-10

-5

-2

-1

-500m

Ta= -40 ℃

25 ℃

100 ℃

-200m

-100m

- 100μ

-20 0μ- 500μ -1m -2m -5m -10m -20m

Output Current :Io(A)

-50m -100m

Fig.3 DC current gain vs.output current

1k

Vo=-5V

500

T a=100℃

25℃

-40 ℃

200

100

50

20

10

5

2

1

-100μ -20 0μ -50 0μ-1m -2m -5m

-10m -20m -50m -100m

Output Current :Io(A)

Fig.2 Output current vs Input voltage

.(OFF characterristics)

-10m

V c c =-5V

-5m

-2m

-1m

-500μ

T a=100℃

25℃

-40 ℃

-200μ

-100μ

-50μ

-20μ

-10μ

-5μ

-2μ

-1μ

0

-0.5 -1.0 -1.5 -2.0 -2.5 -3.0

Input Voltage :VI(OFF) V

-1

-500m

-200m

-100m

Fig.4Output voltage vs.output current

lo/lI=20

T a=100℃

25℃

-40℃

-50m

-20m

-10m

-5m

-2m

-1m

-100μ -2 00μ -500 μ-1m -2m -5m -10m -20m -50m -100m

Output Current :Io(A)

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exceed, even m om entarily, rated values (such as m axim um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or system s where

m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in

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presented in this docum ent does not form part of any quotation or contract, is believed to be accurate

and reliable and m ay be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3

QW-R206-044,B

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