DTB113ZG-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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DTB113ZG-AE3-R

DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

Unisonic Technologies 

DTB113Z

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

Output Current

VIN

-10 ~ +5

V

IC

-500

mA

Power Dissipation

Junction Temperature

PD

200

mW

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Input Voltage

VIN(OFF) VCC= -5V, IOUT= -100μA

VIN(ON) VOUT= -0.3V, IOUT= -20mA

-3

-0.3

V

Output Voltage

VOUT(ON) IOUT/IIN= -50mA/-2.5mA

-0.3

V

Input Current

IIN

VIN=-5V

-7.2 mA

Output Current

IOUT(OFF) VCC=-50V, VIN=0V

-0.5 μA

DC Current Gain

hFE

VOUT=-5V, IOUT=-50mA

56

Input Resistance

R1

0.7

1

1.3

KΩ

Resistance Ratio

R2/R1

8

10

12

Transition Frequency

fT

VCE=-10V, IE= 50mA, f=100MHz(Note)

200

MHz

Note: Transition frequency of the device

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-092.D

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