DTC114 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTC114

NPN 100mA 50V Digital Transistors

ROHM Semiconductor 

DTC114E series

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

DTC114EM

DTC114EEB

DTC114EE

DTC114EUB

DTC114EUA

DTC114EKA

Junction temperature

Range of storage temperature

Symbol

VCC

VIN

IO

IC(MAX.)*1

PD *2

Tj

Tstg

Data Sheet

Values

Unit

50

V

-10 to +40

V

50

mA

100

mA

150

mW

200

mW

150

°C

-55 to +150

°C

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Input voltage

VI(off)

VI(on)

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 10mA

Output voltage

VO(on) IO / II = 10mA / 0.5mA

Input current

II

VI = 5V

Output current

IO(off) VCC = 50V, VI = 0V

DC current gain

GI

VO = 5V, IO = 5mA

Input resistance

R1

-

Resistance ratio

R2/R1

-

Transition frequency

fT *1

VCE = 10V, IE = -5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

Min. Typ. Max. Unit

-

-

0.5

V

3

-

-

-

0.1 0.3

V

-

-

0.88 mA

-

-

0.5

mA

30

-

-

-

7

10

13

kW

0.8

1

1.2

-

-

250

-

MHz

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© 2012 ROHM Co., Ltd. All rights reserved.

2/10

2012.04 - Rev.A

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