DTC113T(2014) 데이터 시트보기 (PDF) - Unisonic Technologies

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DTC113T
(Rev.:2014)

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTC113T

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

50

V

Emitter to Base Voltage

Collector to Emitter voltage

VEBO

6

V

VCEO

50

V

Collector Current

Peak Collector Current

IC

100

mA

ICM

200

mA

Collector Power Dissipation

SOT-23/SOT-323

SOT-523

PC

200

150

mW

Junction Temperature

TJ

+150

C

Storage Temperature

TSTG

-55~+150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Input Resistance

Current Gain Bandwidth Product

SYMBOL

BVCEO

ICBO

hFE

VCE(SAT)

R1

fT

TEST CONDITIONS

IC=100μA, RBE=∞

VCB=50V, IE=0

VCE=5V, IC=1mA

IC=10mA, IB=0.5mA

VCE=6V, IE=-10mA

MIN TYP MAX UNIT

50

V

0.1 μA

100

0.3 V

0.7 1.0 1.3 kΩ

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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