DTC144TM(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor
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DTC144TM Datasheet PDF : 3 Pages
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DTC144TM / DTC144TE / DTC144TUA / DTC144TKA
Packaging specifications
Package
Part No.
Packaging type
Code
Basic ordering
unit (pieces)
DTC144TM
DTC144TE
DTC144TUA
DTC144TKA
VMT3
Taping
T2L
8000
−
−
−
EMT3
Taping
TL
3000
−
−
−
UMT3
Taping
T106
3000
−
−
−
SMT3
Taping
T146
3000
−
−
−
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
DTC144TM DTC144TE DTC144TUA DTC144TKA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
Pc
50
V
50
V
5
100
mA
150
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 100
Input resistance
R1 32.9
Transition frequency
fT ∗ −
∗ Characteristics of built-in transistor
Typ.
−
−
−
−
−
−
250
47
250
Max.
−
−
−
0.5
0.5
0.3
600
61.1
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC/IB=5mA/0.5mA
VCE=5V, IC=1mA
−
VCE=10V, IE= −5mA, f=100MHz
Electrical characteristic curves
1k
VCE=5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
500m
200m
100m Ta=100°C
25°C
50m
−40°C
lC/lB=10
20m
10m
5m
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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