DTD113Z
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-5 ~ +10
V
Output Current
IOUT
500
mA
Power Dissipation
PC
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Voltage
VIN(OFF) VCC =5V, IOUT =100μA
VIN(ON) VOUT =0.3V, IOUT =20mA
Output Voltage
VOUT(ON) IOUT/IIN =50mA/2.5mA
Input Current
IIN
VIN=5V
Output Current
IOUT(OFF) VCC =50V, VIN =0V
DC Current Gain
hFE VOUT =5V, IOUT =50mA
Input Resistance
R1
Resistor Ratio
R2/R1
Transition Frequency
fT
VCE =10V, IE =−50mA, f=100MHz
Note: Transition frequency of the device
MIN TYP MAX UNIT
0.3
V
1.5
0.1 0.3 V
7.2 mA
0.5 μA
82
0.7 1 1.3 KΩ
8
10 12
200
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-082,C